US next-gen BAT laser system aims for a 10x efficiency boost for EUV chip production

Currently, EUV lithography systems consume a lot of power—up to 1,400 kilowatts for high-NA EUV tools. Most of this energy is used to heat tin droplets to a blazing 500,000°C to create plasma that emits the needed 13.5-nanometer light. Using diode-pumped solid-state technology, the BAT laser might improve energy efficiency and heat management compared to today’s CO2 lasers.

I did not know a high-NA EUV tool uses 1.4 megawatt of power. Although the 500,000°C temperature requirement does explain why.